MF039100 - SEMI MF391 - Test Method for Minority Carrier Diffusion Length in Extrinsic Semiconductors by Measurement of Steady-State Surface Photovoltage Revision:SEMI MF391-1106 - Superseded This Test Method describes a

This Test Method describes a procedure which may be used to rank the pitting corrosion resistance of wetted surfaces of tubing or components of finished surfaces intended for use in corrosive gas systems

SEMI F70 — Test Method for Determination of Particle Contribution of Gas Delivery System

Three years of data with forecast through next year

The accuracy of the coordinate data generated or used is equipment-dependent

SEMI D76-0318 (first published)

MF039100 - SEMI MF391 - Test Method for Minority Carrier Diffusion Length in Extrinsic Semiconductors by Measurement of Steady-State Surface Photovoltage Revision:SEMI MF391-1106 - Superseded This Test Method describes a1 Purpose 1. 1 Minority carrier lifetime is one of the essential characteristics of semiconductor materials. In epitaxial layers and in thin single crystal wafers, the surface recombination corrections necessary to derive the minority carrier lifetime from the photoconductive decay (PCD) method covered by SEMI MF28 and SEMI MF1535 are excessively large. 1. 2 Therefore, other test methods are required to cover the measurement of minority carrier